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An Ultra-Low Power Dual-Band IR-UWB Transmitter in 130nm CMOS

Filed under:
O.Z. Batur, E. Akdag, H. Akkurt, A. Oncu, M. Koca, G. Dundar, IEEE Transactions on Circuits and Systems II-Express Briefs, vol. 59, no.11, pp. 701-705, November 2012

In this brief, a 0–960-MHz/3.1–5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. The pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 $hbox{mm}^{2}$. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 $muhbox{W}$, respectively. The lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 $muhbox{W}$, respectively. The dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.

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